Published March 6, 2006 | Version v1
Journal article

Effect of radio-frequency power levels on electron density in a confined two-frequency capacitively-coupled plasma processing tool

  • 1. Plasma Research Laboratory, National Center for Plasma Science and Technology and School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

Description

The plasma electron density ne in a symmetric confined capacitive-coupled plasma processing tool containing Ar/O2/C4F8 gas mixtures is studied as a function of two, combined radio frequency (2 MHz+27 MHz) powers. For measuring ne we have used a floating hairpin resonance probe. The results show a linear increase in ne with 27 MHz power. Also the density is higher with an increase in 2 MHz power, in contrast with published particle-in-cell simulation results in argon where the plasma density decreased with increases in low frequency voltage, for fixed high frequency current [P. C. Boyle et al., J. Phys. D 37, 697 (2004)]. Analyzing the relative phase between radio frequency current and voltage, we observe slightly lower 2 MHz phase shifts at higher 2 MHz voltage, which is attributed to an increase in the real component of the current through the sheath. This is possible due to the increase in secondary electron emissions arising from ion bombardment, which is favored by an increase in 2 MHz voltage. We therefore conclude that the secondary electrons could play an important role in the discharge process

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
88
Journal Issue
10
Journal Page Range
p. 101501-101501.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2006 American Institute of Physics