Published 2012
| Version v1
Miscellaneous
Application of Carbon nano tube field-effect transistor as sensor in analyzing of integrated circuits
Creators
- 1. University of Yazd, Department of Physics, Yazd (Iran, Islamic Republic of)
Description
The purpose of this investigation is to develop a current-transport model for Carbon nano tube field effect transistor applicable in the analysis of detection of chemical material. We implemented an efficient numerical model of a Carbon nano tube field-effect transistor with regard to ultrasonic nano welding treatment. Our results have shown a strong dependence of the I-V characteristics on the wrapping angle and diameter of Carbon nano tubes. Also our calculations have indicated that Carbon nano tube field effect transistors based sensors are promising compact ultra-sensitive and ultra low-power advanced miniaturized sensors in comparison to conventional sensors.
Availability note (English)
Available from Atomic Energy Organization of IranAdditional details
Additional titles
- Original title (Persian)
- Karbord-e tranzistor-e asar-e meidan-e nano lule-ye karboni be onvan-e hesgar dar tahlil-e madar-haye mojtama'
Publishing Information
- Publisher
- The Physical Society of Iran
- Imprint Place
- Tehran, On (Iran, Islamic Republic of)
- Imprint Pagination
- [4 p.]
Conference
- Title
- The Annual Physics Conference of Iran
- Original Conference Title
- Konferanse phizike Iran
- Dates
- 27-30 Aug 2012
- Place
- Yazd (Iran, Islamic Republic of)
INIS
- Country of Publication
- Iran, Islamic Republic of
- Country of Input or Organization
- Iran, Islamic Republic of
- INIS RN
- 43125123
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CARBON; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; NANOTUBES; SENSORS; ULTRASONIC WELDING
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; FABRICATION; JOINING; MICROELECTRONIC CIRCUITS; NANOSTRUCTURES; NONMETALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TRANSISTORS; WELDING