Published September 14, 2015 | Version v1
Journal article Metadata-only

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Creators

  • 1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 790-784 (Korea, Republic of)

Description

In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer

Additional details

Identifiers

DOI
10.1063/1.4931136;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
11
Journal Page Range
p. 113504-113504.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47052080
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANNEALING; COPPER OXIDES; DISTRIBUTION; FILAMENTS; LAYERS; RUPTURES; SPECTROSCOPY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CHALCOGENIDES; COPPER COMPOUNDS; ELECTRON MICROSCOPY; FAILURES; HEAT TREATMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2015 AIP Publishing LLC