A comparison of calculated arsenic implantation profiles in silicon with experimental results

A comparison of calculated arsenic implantation profiles with experimental results is presented. The measured arsenic profiles are characterized by a high concentration region and a low concentration tail, which may be attributed to channeling. The high concentration region will agree well with the theory, if the temperature of annealing is not too high (e.g., 200 to 7000C) and the implanted dose is not too low (e.g., 1014 to 1016 cm-2). For annealing at >= 8500C, the high concentration region is influenced by thermodiffusion of arsenic. At doses below the amorphization dose (< 1014 cm-2) the high concentration region does not agree with the calculated profiles because of the influence of channeling during the implantation