Interfacial properties of water/heavy water layer encapsulate in bilayer graphene nanochannel and nanocapacitor
Creators
- 1. Rice University, Department of Civil and Environmental Engineering (United States)
- 2. Shahid Rajaee Teacher Training University, Department of Chemistry (Iran, Islamic Republic of)
Description
Water through nanochannels of graphene (G) exposes the capillary pressure, calling fundamental understanding and predictive design of water within G nanochannels. Nanoconfinement induces switching behaviors at an atomic level, altering electronic and geometric structures. Herein, we study the single-layer water (SLW) and double-layer water (DLW) on monolayer G and encap-sulated in G layers and explore their diverse interfacial properties using a number of high level first principles calculations. By correlating the stability of adsorption, and interfacial properties such as intermediate pressure, charge transfer, structural deformation, one can decode various synergies in interaction properties of water on G nanocapillars. The external electric field (Eext) enhances polarization of system. More especially, changing the strength of Eext can effectively modulate the bandgap of monolayer G and bilayer graphene (BLG), and correspondingly causes a semimetal-semiconductor transition, i.e. Eg = 0.8 and 0.9 eV respectively. We also provide a comparison of phonon vibrational modes of water and heavy water (D2O) encapsulated within BLG, capturing their mobility as a key factor of separation mechanism. Moreover, we propose a nanocapacitor array of graphene-water-graphene composite, which electrodes has been separated by a water layer as a dielectric film. Nanometre-scale G capillaries open up a pathway to fabricate atomically channels walls for nanofluidic technology and nanocapacitor as a key device in integrated circuits (ICs).
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 30
- Journal Issue
- 13
- Journal Page Range
- p. 11964-11975
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52018862
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DIELECTRIC MATERIALS; ELECTRIC FIELDS; GRAPHENE; HEAVY WATER; INTEGRATED CIRCUITS; LAYERS
- Descriptors DEC
- CARBON; DEUTERIUM COMPOUNDS; ELECTRONIC CIRCUITS; ELEMENTS; HYDROGEN COMPOUNDS; MATERIALS; MICROELECTRONIC CIRCUITS; NONMETALS; OXYGEN COMPOUNDS; WATER
Optional Information
- Copyright
- Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature