Nano-cell Fabrication Using the Behavior of Point Defects Induced by Ion Implantation

The authors' finding that cellular structure is formed on the GaSb, InSb and Ge surfaces by ion implantation is introduced. A novel nano-fabrication technique based on the authors' discovery, which consists of a top-down process and a bottom-up process, is performed on a GaSb surface using focused ion beam. In the top-down procedure, a two-dimensional lattice of voids (initial structure) is created by irradiation with a focused ion beam. Then, the bottom-up process for developing the initial structure into nano-cell structures is performed using the image scanning mode of FIB. The structure is observed by FIB and SEM. The possibilities of the new technique are examined, varying the ion acceleration voltage and the ion dose.