Weak localization and electron-electron interaction in modulation doped GaAs/AlGaAs heterostructures

The first heterostructure wafer only had one electronic subband at the GaAs/AlGaAs interface populated. Weak localization magnetoresistance was interpreted by a theory valid to relatively high magnetic fields and also valid for electrons with a long mean free path. The adjustable parameter in fitting the magnetoresistance was in each case the phasebreaking relaxation time, which could then subsequently be plotted as a function of temperature. The temperature dependence of the phasebreaking rate could be interpreted on the basic of existing theories, but the residual relaxation rate at the lowest temperature remains so far unexplained. Already at low magnetic fields the weak localization magnetoresistance saturates, indicating a complete quench of weak localization. We find that the value of saturation (i.e. the total weak localization at the appropriate temperature) was smaller than predicted by the existing theories. At magnetic fields of the order of the inverse electron mobility, a quadratic magnetoresistance show up in our experiments. This quadratic magnetoresistance corresponds to corrections to the conductivity of the order of e2/h. Whereas we find that the temperature dependence of this conductivity correction is well in agreement with predicted effects of electron-electron interaction, the dependence on mobility, which we can measure via our ion implantation, is larger than any existing theory predicts, yet still in the ballpark of the conductance quantum. (orig./BHO)