Published December 4, 2013
| Version v1
Journal article
A first-principles core-level XPS study on the boron impurities in germanium crystal
- 1. Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan)
- 2. Department of Applied Mathematics and Physics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori, 680-8552 (Japan)
- 3. Central Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395 (Japan)
Description
We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si
Additional details
Identifiers
- DOI
- 10.1063/1.4848275;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1566
- Journal Issue
- 1
- Journal Page Range
- p. 41-42
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 31. international conference on the physics of semiconductors
- Acronym
- ICPS 2012
- Dates
- 29 Jul - 3 Aug 2012
- Place
- Zurich (Switzerland)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45083096
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON; CRYSTALS; FORMATION HEAT; GERMANIUM; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ELECTRON SPECTROSCOPY; ELEMENTS; ENTHALPY; METALS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; REACTION HEAT; SEMIMETALS; SPECTROSCOPY; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC