High-resolution x-ray diffraction studies of self-organized SiGe(C) islands

The scope of this thesis is the investigation of semiconductor heterostructures with various x-ray scattering techniques. The work focuses on self-organized Si-based nanostructures. Their small size and the difference in band gap with respect to the surrounding matrix lead to quantum confinement, with increased density of states and carrier localization as most important consequences. These make the use of such nanostructures in novel electrical and optical devices promising. A big challenge in the fabrication of nanostructures lies in the required high areal density at extremely low defect densities. Self-organized growth is in this aspect superior to, e.g. the post-growth lithographic patterning of planar heterostructures. There are, however, other difficulties: the dependence of the internal structure and the size and size homogeneity of self-organized nanostructures on various growth parameters has not yet been fully understood, leaving the fabrication of structures with predictable properties difficult. The investigation of self-organized nanostructures presented in this thesis intends to contribute to the understanding of the growth processes. In particular, the correlation properties of SiGe quantum dots in multilayers, and the determination of the strain and composition distribution within free-standing SiGe dots are major topics of this work. Another main part of the presented thesis is the conception and setup of a new x-ray diffractometer, expanding the possibilities of structural characterization at the 'Institut fuer Halbleiterphysik'. A detailed description of this instrument shall serve as an operating manual and quick reference. (author)