Properties of thin N-type Yb0.14Co4Sb12 and P-type Ce0.09Fe0.67Co3.33Sb12 skutterudite layers prepared by laser ablation

The properties of thin thermoelectric layers (about 60 nm in thickness) prepared by pulsed laser deposition are presented. Hot pressed targets were made from ''middle'' temperature range thermoelectric bulk materials with the potential high figure of merit ZT. P-type and N-type layers were prepared from Yb0.19Co4Sb12 and Ce0.1Fe0.7Co3.3Sb12 targets, respectively. The thin films were deposited on quartz glass substrates using KrF excimer laser. The individual layers were prepared by applying different laser beam energy densities (2 or 3 J cm-2) at several substrate temperatures (200, 250, or 300 deg. C). Crystallinity and composition of the layers were examined by x-ray diffraction and wavelength dispersive analysis, respectively. Homogeneity of Yb across a surface of the Yb filled film was explored by secondary ion mass spectrometry. The thermoelectric properties, the Seebeck coefficient, the electrical resistivity, and the power factor, for the best prepared P and N layer are presented in the temperature range from 300 to 500 K.