Published 2013 | Version v1
Journal article

Dielectric properties of crystals of R3Sb5O12 family (R =Gd, Pr, Nd, Er)

  • 1. Vologda State Technical University, Vologda (Russian Federation)
  • 2. Khudjand State University, Khudjand(Tajikistan)
  • 3. Mining and Metallurgical Institute of Tajikistan, Buston (Tajikistan)
  • 4. S.U. Umarov Physical-Technical Institute, Dushanbe (Tajikistan)

Description

Present article is devoted to study of dielectric properties of crystals of R3Sb5O12 family (R =Gd, Pr, Nd, Er). Thus, the dielectric properties of new combinations of R3Sb5O12 family (R =Gd, Pr, Nd, Er) under the different temperatures and tensions of electrical field have been researched. Experimental installations have been developed for studying spontaneous polarization and permittivity of dielectrics at various temperatures. It is shown how the crystals under study spontaneously polarize and at what temperature the sample passes from the ferroelectric to the paraelectric state. It was found that when a sample is placed in an electric field, the value of spontaneous polarization increases with increasing value of the electric field strength and gradually saturates. The reasons of increasing of the rate of dielectric permeability to the vicinity of temperature of structural phase transition have been described. (author)

Availability note (English)

Available from http://elibrary.ru/

Additional details

Additional titles

Original title (Russian)
Диелектрическиые своыства кристаллов семеыства Р<суб>3</суб>Сб<суб>5</суб>О<суб>12</суб> (Р =Гд, Пр, Нд, Ер)

Identifiers

Publishing Information

Journal Title
Vestnik Natsionalnogo Universiteta
Journal Volume
1-2
Journal Issue
106
Journal Page Range
p. 151-156
ISSN
1993-6923