Published June 1983
| Version v1
Journal article
Improving the performance of fast high-power silicon devices exposed to gamma rays from Co60
Creators
Description
A method is reported for improving the performance of fast high-power silicon devices. The method is based on heat-treating silicon p--n junctions after exposure to γ rays so that the radiation-induced defects responsible for increased device current are annealed. As a result, the concentration of radiation defects, which determines the lifetime of the carriers, remains unchanged
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Tech. Phys. (Engl. Transl.)
- Journal Volume
- 28
- Journal Issue
- 6
- Series
- Sov. Phys. - Tech. Phys. (Engl. Transl.).
- Journal Page Range
- 692-694
- ISSN
- 0038-5662
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 15046188
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; CHARGE CARRIERS; COBALT 60; CRYSTAL DEFECTS; GAMMA RADIATION; HEAT TREATMENTS; P-N JUNCTIONS; PERFORMANCE; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; LIFETIME; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- Cover-to-cover translation of Zhurnal Tekhnicheskoj Fiziki (USSR).