Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing

It has been proposed that the high reflectivity state observed in pulsed laser/electron/ion beam annealing of Si and other semiconductors results when the electron-hole plasma created by the initial absorption of the ionizing radiation undergoes a boson condensation. An experiment is proposed that is argued to be both easy to perform and to offer a conclusive demonstration of boson condensation. It involves observation of the single plasmon mode by diffraction or from the appearance of linear ripples left on the solid surface and the rotation of this pattern. Preliminary observations seem to confirm the condensation. (author)