InGaAs self-switching diode-based THz bridge rectifier
Creators
- 1. Department of Electronics and Communication Engineering, Punjab Engineering College (Deemed to be University), Chandigarh (India)
- 2. School of Microelectronic Engineering, Universiti Malaysia Perlis, Kangar (Malaysia)
- 3. Department of Applied Sciences, Punjab Engineering College (Deemed to be University), Chandigarh (India)
- 4. Department of Electrical and Electronics Engineering, University of Manchester, Manchester (United Kingdom)
Description
Here, an In0.53Ga0.47As-based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. A zero-bias self-switching diode exhibiting nonlinear current–voltage characteristics has been utilized for the device design. The output current, threshold voltage and maximum operating frequency of the device can be easily tuned by adjusting the channel width and length of the SSD, whereas the properties of conventional rectifiers are typically material-dependent. The AC and DC characteristics of the SSDBR are presented, demonstrating full wave rectification up to frequencies of 0.240 THz with a noise-equivalent power of 39.90 pW (Hz1/2)−1. Furthermore, the simulated results are validated by developing an analytical model for an InGaAs-based SSDBR. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6641/abffe0Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 36
- Journal Issue
- 7
- Journal Page Range
- [7 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53050811
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; RECTIFIERS; SWITCHING DIODES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SIMULATION