Published July 1, 2021 | Version v1
Journal article

InGaAs self-switching diode-based THz bridge rectifier

  • 1. Department of Electronics and Communication Engineering, Punjab Engineering College (Deemed to be University), Chandigarh (India)
  • 2. School of Microelectronic Engineering, Universiti Malaysia Perlis, Kangar (Malaysia)
  • 3. Department of Applied Sciences, Punjab Engineering College (Deemed to be University), Chandigarh (India)
  • 4. Department of Electrical and Electronics Engineering, University of Manchester, Manchester (United Kingdom)

Description

Here, an In0.53Ga0.47As-based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. A zero-bias self-switching diode exhibiting nonlinear current–voltage characteristics has been utilized for the device design. The output current, threshold voltage and maximum operating frequency of the device can be easily tuned by adjusting the channel width and length of the SSD, whereas the properties of conventional rectifiers are typically material-dependent. The AC and DC characteristics of the SSDBR are presented, demonstrating full wave rectification up to frequencies of 0.240 THz with a noise-equivalent power of 39.90 pW (Hz1/2)−1. Furthermore, the simulated results are validated by developing an analytical model for an InGaAs-based SSDBR. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/abffe0

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
36
Journal Issue
7
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET