Published November 3, 2008
| Version v1
Journal article
Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate
- 1. Graduate Institute of Electronics Engineering and Center for Condensed Matter Sciences, National Taiwan University, Taipei, 106, Taiwan (China)
- 2. Department of Physics, University of Massachusetts Boston, Boston, Massachusetts (United States)
- 3. United Microelectronics Corporation, Tainan 741, Taiwan (China)
Description
We investigate the morphology and strain distribution of the surface crosshatch undulation on a strain-relaxed SiGe layer grown on a low-temperature Si buffer layer by atomic force microscopy and spatially-resolved UV-Raman spectroscopy. Surface crosshatch undulation resulted from misfit dislocations at the SiGe/Si interface is associated with the strain relaxation in the SiGe layer. By means of thermal annealing, strain relaxes and the inhomogeneous in-plane strain fluctuation can be eliminated
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.08.075Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.08.075;
- PII
- S0040-6090(08)00819-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 1
- Journal Page Range
- p. 281-284
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. International conference on silicon epitaxy and heterostructures
- Acronym
- ICSI-5
- Dates
- 20-24 May 2007
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059010
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; DISLOCATIONS; FLUCTUATIONS; GERMANIUM SILICIDES; INTERFACES; LAYERS; MORPHOLOGY; RAMAN SPECTROSCOPY; RELAXATION; STRAINS; SURFACES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GERMANIUM COMPOUNDS; HEAT TREATMENTS; LASER SPECTROSCOPY; LINE DEFECTS; MICROSCOPY; SILICIDES; SILICON COMPOUNDS; SPECTROSCOPY; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.