On growth mechanisms and dynamic simulation of growth process based on the experimental results of nanowire growth by VLS method on semiconductor substrates

Recently the production of nanowires is attracting many scientists but it also holds many challenges. Many problems including growth mechanisms are still not understood clearly. This paper will show briefly some our experiment results of nanowires (GeO2 and Ga2O3) growth by VLS, the rest of the paper will discuss nanowire growth mechanisms and then showing a developed programme on PC for dynamic simulation of nanowire growth process. This running simulation software for nanowires growth process has contained main mechanisms and we can see directly some physical phenomena concerning growth process by VLS method.