Analysis of structure damages in silicon modified by self-ion-assisted deposition of metal coatings

The energy dependence of damages evolution in silicon in the process of ion-assisted deposition of Co, Mo and W at room temperature are investigated by Rutherford backscattering channeling technique under self-irradiation conditions. The samples were modified by coatings deposition with the use of the resonance ionic source of vacuum arc plasma. Dependence of silicon structure damage on Co+, Mo+, W+ irradiating ions energy is established. Displaced atoms concentration is increased with ion energy increasing, however dechanneling rate in the region beyond the damages peak decreases with ion energy increasing for Co/Si and Mo/Si systems but increases for W/Si one