Conductivity of quantum dot arrays
Creators
- 1. Ioffe Institute, ul. Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
Description
Arrays of quantum dots (QDs), i.e., semiconducting nanoparticles with typical sizes of 3–10 nm, have become more than merely an object of scientific research; they are now used in electronic devices. They are appealing mainly due to their optical properties, which depend on the QD size. Here, we consider the electronic properties of such arrays. These properties typically inherit the properties of bulk semiconductors, but in some cases can be substantially different due to the discreteness of sizes and a particular type of disorder in the array: the difference in size and spacing among QDs, as well as the number of donors. Notably, in such arrays, the metal–dielectric transition occurs at a much higher concentration of donors than in the bulk material. The nature of hopping conductivity in the dielectric phase strongly depends on the disorder type, quantum confinement effects, the Coulomb blockade, and the overlap integral of QDs. (reviews of topical problems)
Availability note (English)
Available from http://dx.doi.org/10.3367/UFNe.2019.08.038649Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Uspekhi
- Journal Volume
- 63
- Journal Issue
- 10
- Journal Page Range
- p. 994-1014
- ISSN
- 1063-7869
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53035457
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DIELECTRIC MATERIALS; NANOPARTICLES; OPTICAL PROPERTIES; QUANTUM DOTS
- Descriptors DEC
- MATERIALS; NANOSTRUCTURES; PARTICLES; PHYSICAL PROPERTIES