Published November 2009 | Version v1
Journal article

Spin Relaxation of Electrons in Single InAs Quantum Dots

  • 1. SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

Description

By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots (QDs) with the configuration of positively charged excitons X+ (one electron, two holes). The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/26/11/117201

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
26
Journal Issue
11
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU