Published 1990
| Version v1
Book
Carbon doping in InGaAs grown by MBE
Creators
- 1. NTT LSI Lab., 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243001 (Japan)
Description
Carbon doping in InxGa1-xAs is investigated using solid source MBE. In As mole fractions, x, from 0 to 1 are tested. Under a constant doping level, hole concentration decreases with increasing x. When x is higher than 0.6, the conduction type is n and electron concentration increases with x. The conduction-type inversion and the behavior of carrier mobilities are explained by a self-compensation mechanism
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-051-8
- Imprint Title
- Impurities, defects and diffusion in semiconductors
- Imprint Pagination
- 1050 p.
- Journal Page Range
- p. 887-892.
Conference
- Title
- Materials Research Society fall meeting.
- Dates
- 27 Nov - 2 Dec 1989.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22015621
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARBON ADDITIONS; CHARGE CARRIERS; CRYSTAL DOPING; ELECTRONS; EPITAXY; GALLIUM ARSENIDES; HOLE MOBILITY; INDIUM ARSENIDES; MOLECULAR BEAMS; N-TYPE CONDUCTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTONS; MATERIALS; MOBILITY; PNICTIDES; SEMICONDUCTOR MATERIALS
Optional Information
- Secondary number(s)
- CONF-891119--.