Published 1998
| Version v1
Miscellaneous
Effect of magnesium and silicon on the lateral overgrowth of GaN patterned substrates by metal organic vapour phase epitaxy
Creators
- 1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS, Valbonne (France)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of The Third European GaN Workshop EGW-3
- Imprint Pagination
- 97 p.
- Journal Page Range
- p. 24
Conference
- Title
- 3. European GaN Workshop EGW-3
- Dates
- 22-24 Jun 1998
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31064540
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CRYSTAL STRUCTURE; DOPED MATERIALS; GALLIUM NITRIDES; MAGNESIUM ADDITIONS; MEETINGS; ORGANOMETALLIC COMPOUNDS; ORIENTATION; SILICON ADDITIONS; VAPOR PHASE EPITAXY
- Descriptors DEC
- ALLOYS; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; MAGNESIUM ALLOYS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PNICTIDES; SILICON ALLOYS