Enhanced Electronic and Magnetic Properties of Cr- and Mn-Doped GeC Zinc Blende
- 1. Mohammed V University in Rabat. LPHE, Modeling & Simulations, Faculty of Science (Morocco)
- 2. Hassan II Academy of Sciences and Technology (Morocco)
- 3. Mohammed V University in Rabat. CPM, Centre of Physics and Mathematics, Faculty of Science (Morocco)
- 4. CRMEF (Morocco)
Description
The electronic and magnetic properties of the doped GeC by Cr and Mn are studied using the Koringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA). We have determined the nature of the forbidden band gap and investigated the metallic character when the doping is made by the chromium and the manganese. On the other hand, although the doping is above the percolation threshold, the total magnetic moment for Ge1 − 0.25TM0.25C is 0.491 and 0.67 μB for Cr and Mn, respectively. Besides, the polarization as well as the main responsible source of magnetism in the system is determined. Finally, using the mean field theory, the Curie temperature TC is estimated for different concentrations. It was found that the effect of doping with Mn had a significant impact on TC since it exceeded the room temperature. The findings of this work suggest GeC-based diluted magnetic semiconductors as potential materials for electronics applications.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Superconductivity and Novel Magnetism
- Journal Volume
- 33
- Journal Issue
- 8
- Journal Page Range
- p. 2513-2520
- ISSN
- 1557-1939
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55076869
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- APPROXIMATIONS; CHROMIUM; CHROMIUM OXIDES; CURIE POINT; DOPED MATERIALS; ENERGY GAP; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETISM; MANGANESE; MANGANESE IONS; MANGANESE OXIDES; POLARIZATION; SEMICONDUCTOR MATERIALS; ZINC SULFIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; CHROMIUM COMPOUNDS; ELEMENTS; INORGANIC PHOSPHORS; IONS; MANGANESE COMPOUNDS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SULFIDES; SULFUR COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TRANSITION TEMPERATURE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020