Published February 15, 2012 | Version v1
Journal article Metadata-only

The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs

Creators

  • 1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India)
  • 2. Inter University Accelerator Centre (IUAC), New Delhi 110 067 (India)
  • 3. Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

Description

N-channel depletion MOSFETs were irradiated with 140 MeV Si10+ ions, 100 MeV F8+ ions and 48 MeV Li3+ ions in the dose range from 100 krad to 100 Mrad. The MOSFET parameters such as threshold voltage (VTH), transconductance (gm) and mobility of carriers (μ) were determined by systematically studying the I–V characteristics before and after irradiation. The ion irradiated results were compared with Co-60 gamma irradiated results in the same dose range. The degradation in VTH, gm and μ was found to be more for the devices irradiated with Co-60 gamma radiation than that irradiated with swift heavy ions.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2011.07.033

Additional details

Identifiers

DOI
10.1016/j.nimb.2011.07.033;
PII
S0168-583X(11)00677-X;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
273
Journal Page Range
p. 40-42
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
20. international conference on ion beam analysis
Dates
10-15 Apr 2011
Place
Itapema (Brazil)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44034117
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER MOBILITY; COBALT 60; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; HEAVY IONS; IRRADIATION; LITHIUM IONS; MEV RANGE; MOSFET; RADIATION DOSES; RADIATION EFFECTS; SILICON IONS
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHARGED PARTICLES; COBALT ISOTOPES; DOSES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ENERGY RANGE; FIELD EFFECT TRANSISTORS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; MOBILITY; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; PHYSICAL PROPERTIES; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.