Published March 2018 | Version v1
Journal article Metadata-only

Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots

Creators

  • 1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, ROC (China)
  • 2. Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan, ROC (China)
  • 3. Department of Physics and Center for Nano-Technology, Chung-Yuan Christian University, Chung-Li 32023, Taiwan, ROC (China)
  • 4. Center of General Studies, National Kaohsiung Marine University, Kaohsiung 81157, Taiwan, ROC (China)

Description

Optical properties of multi-layer InAs/GaAs quantum dots (QDs) with different GaAs spacer layer thicknesses (dGaAs) of 20, 15 and 10 nm are investigated by time-integrated and time-resolved photoluminescence (PL) spectroscopy. The energy spacing between ground and excited state is observed to be decreased with decrease in dGaAs and increased with increase in excitation intensity. The rate of carrier capture and energy relaxation in QDs is found to be slower at excitation energy of 3.06 eV than that at 1.53 eV which is attributed to intervalley scattering in GaAs. The effect of intervalley scattering process in GaAs on decay time is negligible for dGaAs of 20 nm and is prominent for dGaAs ≤ 15 nm.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2017.11.009

Additional details

Identifiers

DOI
10.1016/j.jlumin.2017.11.009;
PII
S0022231317311729;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
195
Journal Page Range
p. 109-115
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51055295
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EXCITATION; EXCITED STATES; GALLIUM ARSENIDES; INDIUM ARSENIDES; OPTICAL PROPERTIES; QUANTUM DOTS; TIME RESOLUTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; RESOLUTION; TIMING PROPERTIES

Optional Information

Notes
© 2017 Elsevier B.V. All rights reserved.