Effects of deformation on the electronic properties of B–C–N nanotubes
- 1. Departamento de Física, Universidade Federal da Paraíba, Caixa Postal 5008, 58059-900 João Pessoa—PB (Brazil)
- 2. Departamento de Física, Universidade Federal de Pelotas, Caixa Postal 354, 96010-900 Pelotas—RS (Brazil)
- 3. Instituto Federal da Bahia—Campus Vitória da Conquista, Av. Amazonas 3150, 45030-220 Vitória da Conquista—BA (Brazil)
- 4. Departamento de Física, ICEX, Universidade Federal de Minas Gerais, Caixa Postal 702, 30123-970 Belo Horizonte—MG (Brazil)
Description
We apply first-principles methods, using density functional theory, to investigate the effects of flattening deformation on the electronic properties of BC2N and C-doped BNNTs. Four different types of BC2N structures are considered. Two of them are semiconductors, and the radial compression produces a significant reduction of the energy band gap. The other two types of structures are metallic, and the effect of radial compression is quite distinct. For one of them it is found the opening of a small band gap, and for the other one no changes are observed. For C-doped tubes, it is also found that the electronic properties undergo significant modifications when subjected to radial compression. - Graphical Abstract: We apply first-principles methods, using density functional theory, to investigate the effects of flattening deformation on the electronic properties of BC2N and C-doped BNNTs. Four different types of BC2N structures are considered. Two of them are semiconductors, and the radial compression produces a significant reduction of the energy band gap. The other two types of structures are metallic, and the effect of radial compression is quite distinct. For one of them it is found the opening of a small band gap, and for the other one no changes are observed. For C-doped tubes, it is also found that the electronic properties undergo significant modifications when subjected to radial compression. Highlights: ► We investigated electronic properties of flattened BC2N nanotubes. ► The electronic states depend strongly on compression. ► It is studied flattened BN nanotubes doped with a carbon atom. ► The flattened C-doped structures, presents a significant reduction of the gap.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jssc.2012.08.008Additional details
Identifiers
- DOI
- 10.1016/j.jssc.2012.08.008;
- PII
- S0022-4596(12)00511-7;
Publishing Information
- Journal Title
- Journal of Solid State Chemistry
- Journal Volume
- 197
- Journal Page Range
- p. 254-260
- ISSN
- 0022-4596
- CODEN
- JSSCBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44086309
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; NANOTUBES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CALCULATION METHODS; MATERIALS; NANOSTRUCTURES; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.