Published May 7, 2014
| Version v1
Journal article
Spintronic switches for ultra low energy global interconnects
Creators
- 1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
Description
We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects
Additional details
Identifiers
- DOI
- 10.1063/1.4868699;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 17
- Journal Page Range
- vp.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
Conference
- Title
- 55. annual conference on magnetism and magnetic materials
- Dates
- 14-18 Nov 2010
- Place
- Atlanta, GA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45094966
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DESIGN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GAIN; HETEROJUNCTIONS; IMPEDANCE; INTERFACES; MAGNETISM; SPIN; SWITCHES; TORQUE; TUNNEL EFFECT
- Descriptors DEC
- AMPLIFICATION; ANGULAR MOMENTUM; CURRENTS; ELECTRICAL EQUIPMENT; EQUIPMENT; PARTICLE PROPERTIES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC