Published October 21, 2005
| Version v1
Journal article
Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons
Creators
- 1. Belarusian State University, Minsk (Belarus)
- 2. Institute of Solid State and Semiconductor Physics, Minsk (Belarus)
- 3. Hamburg University, Hamburg (Germany)
- 4. CERN, Geneva (Switzerland)
- 5. National Institute of Materials Physics, Bucharest-Magurele (Romania)
- 6. Joint Institute for Nuclear Research, Dubna (Russian Federation)
Description
The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard float zone silicon. The detectors were irradiated with 3.5 MeV electrons and annealed at temperatures of 50-350 deg. C. It has been found that preliminary hydrogenation at 300 deg. C leads to disappearance of divacancies and vacancy-oxygen complexes at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2005.06.010;
- PII
- S0168-9002(05)01174-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 552
- Journal Issue
- 1-2
- Journal Page Range
- p. 77-81
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 5. international conference on radiation effects on semiconductor materials, detectors and devices
- Dates
- 10-13 Oct 2004
- Place
- Florence (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37045009
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTALS; DAMAGE; DEFECTS; ELECTRONS; HYDROGEN; IRRADIATION; MEV RANGE 01-10; OXYGEN COMPLEXES; PLASMA; SI SEMICONDUCTOR DETECTORS; SILICON; VACANCIES
- Descriptors DEC
- COMPLEXES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; MEASURING INSTRUMENTS; MEV RANGE; NONMETALS; POINT DEFECTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.