Published May 15, 2012
| Version v1
Journal article
The origin of a peak in the reststrahlen region of SiC
- 1. Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)
- 2. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)
Description
A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2011.09.077Additional details
Identifiers
- DOI
- 10.1016/j.physb.2011.09.077;
- PII
- S0921-4526(11)00968-9;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 407
- Journal Issue
- 10
- Journal Page Range
- p. 1525-1528
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 4. South African conference on photonic materials
- Acronym
- SACPM 2011
- Dates
- 2-6 May 2011
- Place
- Kariega Game Reserve (South Africa)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43086377
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- LAYERS; REFLECTIVITY; ROUGHNESS; SILICON CARBIDES; SIMULATION; SURFACES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.