Cu2ZnSnS4-based thin films and solar cells by rapid thermal annealing processing
- 1. Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey)
- 2. Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin (Germany)
- 3. Department of Physics, Izmir Institute of Technology, Urla, Izmir (Turkey)
Description
In this study, kesterite Cu2ZnSnS4 (CZTS) absorber layers were fabricated by DC magnetron sputtering deposition of metallic Cu-Zn-Sn precursors, followed by an annealing treatment in sulfur vapor atmosphere at 600 °C for 3 min using rapid thermal processing (RTP). Three types of stacked metallic films were prepared and included pre-annealing of Cu-Sn stacks in order to induce preferential Cu-Sn alloying. The chemical composition of the sulfurized films was obtained by X-ray fluorescence (XRF) before and after etching the samples in KCN solution. All CZTS thin films are found to be Cu-poor and Zn-rich. Structural characterizations were performed by X-ray diffraction (XRD) and Raman spectroscopy to investigate the impact of pre-annealing on the structural properties of the precursors and final CZTS films. Glow discharge optical emission spectroscopy (GDOES) shows that pre-annealing of the precursors can improve depth homogeneity of the CZTS films. Photoluminescence spectra and the optical band gap energy values are compatible with literature. Selected samples were processed to solar cells and characterized. - Highlights: • Metallic precursors were fabricated on Mo-coated glass by DC magnetron sputtering. • Cu, Zn, and Sn thin films converted to Cu2ZnSnS4 using rapid thermal processing. • Cu2ZnSnS4 thin films showed Cu-poor and Zn-rich composition. • Pre-annealing process of Cu-Sn enhanced homogeneity of Cu2ZnSnS4 thin films. • The best solar cell had conversion efficiency of 2.2%.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2017.03.008Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2017.03.008;
- PII
- S0040-6090(17)30183-9;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 628
- Journal Page Range
- p. 1-6
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50023882
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CDZNTE SEMICONDUCTOR DETECTORS; CHEMICAL COMPOSITION; DEPOSITION; EFFICIENCY; EMISSION SPECTROSCOPY; FLUORESCENCE; GLASS; MAGNETRONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SPECTRA; THIN FILMS; X RADIATION; X-RAY DIFFRACTION; X-RAY FLUORESCENCE ANALYSIS
- Descriptors DEC
- CHEMICAL ANALYSIS; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; FILMS; HEAT TREATMENTS; IONIZING RADIATIONS; LASER SPECTROSCOPY; LUMINESCENCE; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NONDESTRUCTIVE ANALYSIS; PHOTON EMISSION; RADIATION DETECTORS; RADIATIONS; SCATTERING; SEMICONDUCTOR DETECTORS; SPECTROSCOPY; X-RAY EMISSION ANALYSIS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.