Published April 2012 | Version v1
Journal article Metadata-only

Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange

Creators

  • 1. Center for Nanoanalysis and Electron Microscopy (CENEM), Materials Science Department VII, University of Erlangen-Nürnberg (Germany)
  • 2. Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching (Germany)

Description

The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.scriptamat.2011.12.045

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2011.12.045;
PII
S1359-6462(12)00005-X;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
66
Journal Issue
8
Journal Page Range
p. 550-553
ISSN
1359-6462
CODEN
SCMAF7

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45024850
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM; AMORPHOUS STATE; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFUSION; DISTANCE; GRAIN BOUNDARIES; GRAIN GROWTH; LAYERS; SILICON; STRESSES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ELECTRON MICROSCOPY; ELEMENTS; FILMS; METALS; MICROSCOPY; MICROSTRUCTURE; PHASE TRANSFORMATIONS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.