Published July 1981
| Version v1
Journal article
Model of charge-carrier recombination in silicon with clusters of radiation-induced defects
Creators
- 1. Belorusskij Gosudarstvennyj Univ., Minsk. Inst. Prikladnykh Fizicheskikh Problem
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Модел' рекомбинации носителей заряда в кремнии, содержащем кластеры радиационных дефектов
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 15
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1452
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 13660354
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CHARGE CARRIERS; CRYSTAL DEFECTS; PROBABILITY; QUANTITY RATIO; RECOMBINATION; SILICON; SOLID CLUSTERS
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; SEMIMETALS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).