Published May 2003
| Version v1
Journal article
FLAPW electronic band structure of the filled skutterudite ThFe4P12
Creators
Description
The electronic band structure is calculated for ThFe4P12 by using an FLAPW method. The result reveals that, between the filled valence bands and empty conduction bands, there is a direct band gap at the Γ point with gap width of 33.1 mRy (0.45 eV), contrary to experimental results
Additional details
Identifiers
- DOI
- 10.1016/S0921-4526(02)02033-1;
- arXiv
- arXiv:math/0411079v3;
- PII
- S0921452602020331;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 329-333
- Journal Issue
- 1-2
- Journal Page Range
- p. 464-466
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36094193
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRONIC STRUCTURE; ENERGY GAP; EV RANGE; IRON COMPOUNDS; PHOSPHIDES; THORIUM COMPOUNDS; VALENCE
- Descriptors DEC
- ACTINIDE COMPOUNDS; ENERGY RANGE; PHOSPHORUS COMPOUNDS; PNICTIDES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.