Published February 1995 | Version v1
Journal article Metadata-only

Crystal defect revealing in InP/InGaAsP heterojunctions using scanning electron microscope in secondary electron emission mode

Creators

Description

Methods of detecting epitaxial growth defects on chips of laser InP/InGaAsP heterostructures, based on preliminary photoelectrochemical preparation of samples for investigations in the regime of SEM secondary electron emission are described. Samples under investigation are 100-300 μm thickness plates. 8 refs.; 3 figs

Additional details

Additional titles

Original title (Russian)
Выявление дефектов кристаллической структуры гетерокомпозиций InP/InGaAsP в режиме вторичной электронной эмиссии растрового электронного микроскопа

Publishing Information

Journal Title
Izvestiya Akademii Nauk. Seriya Fizicheskaya
Journal Volume
59
Journal Issue
2
Journal Page Range
p. 24-27.
CODEN
IRAFEO

Conference

Title
15. Conference on electron microscopy.
Dates
15-17 May 1994.
Place
Chernogolovka (Russian Federation).

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26076246
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ARSENIC COMPOUNDS; CRYSTAL DEFECTS; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; IMAGES; INDIUM PHOSPHIDES; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION
Descriptors DEC
CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS