Published January 12, 2015 | Version v1
Journal article Metadata-only

Enhanced quantum coherence in graphene caused by Pd cluster deposition

Creators

  • 1. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and Department of Physics, Nanjing University, Nanjing 210093 (China)
  • 2. Key Lab of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026 (China)
  • 3. Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Coordination Chemistry, and School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)
  • 4. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230027 (China)
  • 5. School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

Description

We report on the unexpected increase in the dephasing lengths of a graphene sheet caused by the deposition of Pd nanoclusters, as demonstrated by weak localization measurements. The dephasing lengths reached saturated values at low temperatures. Theoretical calculations indicate the p-type charge transfer from the Pd clusters, which contributes more carriers. The saturated values of dephasing lengths often depend on both the carrier concentration and mean free path. Although some impurities are increased as revealed by decreased mobilities, the intense charge transfer leads to the improved saturated values and subsequent improved dephasing lengths

Additional details

Identifiers

DOI
10.1063/1.4905868;
arXiv
arXiv:1402.3386v2;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
2
Journal Page Range
p. 023108-023108.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46104824
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABUNDANCE; CONCENTRATION RATIO; DEPOSITION; GRAPHENE; IMPURITIES; MEAN FREE PATH; MOBILITY; NANOSTRUCTURES; PALLADIUM; P-TYPE CONDUCTORS; SHEETS; SOLID CLUSTERS; TEMPERATURE DEPENDENCE
Descriptors DEC
CARBON; DIMENSIONLESS NUMBERS; ELEMENTS; MATERIALS; METALS; NONMETALS; PLATINUM METALS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENTS

Optional Information

Notes
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