Published October 1, 2020
| Version v1
Journal article
Spin-relaxation times exceeding seconds for color centers with strong spin–orbit coupling in SiC
Creators
- 1. Zernike Institute for Advanced Materials, University of Groningen, NL-9747AG Groningen (Netherlands)
- 2. Norstel AB, Ramshällsvägen 15, SE-602 38 Norrköping (Sweden)
- 3. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)
Description
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin–orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin–orbit coupling leads to a suppression of spin–lattice and spin–spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime T 1 of 2.4 s at 2 K. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/abbf23Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 22
- Journal Issue
- 10
- Journal Page Range
- [7 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52052297
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AXIAL SYMMETRY; COLOR CENTERS; COUPLING; CRYSTAL DEFECTS; CRYSTAL FIELD; IMPURITIES; PERFORMANCE; RELAXATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPIN; TRANSITION ELEMENTS
- Descriptors DEC
- ANGULAR MOMENTUM; CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; MATERIALS; METALS; PARTICLE PROPERTIES; POINT DEFECTS; SILICON COMPOUNDS; SYMMETRY; VACANCIES