Published 2002 | Version v1
Miscellaneous Open

Effect of Gd doping on the absorption properties of TlGaSe2

  • 1. Atatuerk University, Faculty of Science and Art, Physics Department, Erzurum (Turkey)
  • 2. Atatuerk University, Erzincan High School, Erzincan (Turkey)
  • 3. Atatuerk University, Agri Training Faculty, Physics Department, Agri (Turkey)

Description

TlGaSe2 and TlGaSe2:Gd single crystals were grown by the Stockbarger method. Phonon energies calculated in TlGaSe2 and TlGaSe2:Gd are found to be (31.5±4) and (36±4) meV, respectively. At 10 K, direct band gaps of TlGaSe2 and TlGaSe2:Gd are 2.293 and 2.297 eV and indirect band gaps are 2.196 and 2.106 eV, respectively. There is an abrupt change in the energy spectrum of TlGaSe2 and TlGaSe2:Gd in the temperature ranges 105-115 K and 210-215 K. The values obtained from the energy peak change may be phase transition temperatures

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Part of:
Abstracts of the 21. Physics Conference of the Turkish Physical Society

Additional details

Additional titles

Original title (English)
Tuerk Fizik Dernegi, 21. Fizik Kongre Oezetleri

Publishing Information

Publisher
SDU Printing House
Imprint Place
Isparta (Turkey)
Imprint Title
Abstracts of the 21. Physics Conference of the Turkish Physics Society
Imprint Pagination
434 p.
Journal Page Range
p. 392
Report number
INIS-TR--0068

Conference

Title
21. Physics Conference of the Turkish Physics Society
Original Conference Title
Tuerk Fizik Dernegi, 21. Fizik Kongresi
Dates
11-14 Sep 2002
Place
Isparta (Turkey)

INIS

Country of Publication
Turkey
Country of Input or Organization
Turkey
INIS RN
34028268
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; CRYSTAL DOPING; CRYSTAL GROWTH METHODS; ENERGY GAP; GADOLINIUM; STOCKBARGER METHOD; TEMPERATURE RANGE
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTS; METALS; RARE EARTHS; SORPTION

Optional Information

Notes
Imprint:Tuerk Fizik Dernegi, 21. Fizik Kongre Oezetleri