Published May 2008 | Version v1
Journal article Metadata-only

Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

Creators

  • 1. University Science Instrumentation Centre U.S.I.C., Sardar Patel, University, Vallabh Vidyanagar, Gujarat (India)
  • 2. Department of Electronics, Sardar Patel University, Vallabh-Vidyanagar, Gujarat (India)
  • 3. Sardar Vallabhbhai Patel Institute of Technology S.V.I.T, Vasad (India)

Description

An Al/p-AgGaTe2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/crat.200711041

Additional details

Identifiers

DOI
10.1002/crat.200711041;

Publishing Information

Journal Title
Crystal Research and Technology
Journal Volume
43
Journal Issue
5
Journal Page Range
p. 542-546
ISSN
0232-1300
CODEN
CRTEDF

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39063449
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM; CAPACITANCE; ELECTRIC CONDUCTIVITY; GALLIUM TELLURIDES; P-TYPE CONDUCTORS; POLYCRYSTALS; SCHOTTKY BARRIER DIODES; SILVER TELLURIDES; THIN FILMS
Descriptors DEC
CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; GALLIUM COMPOUNDS; MATERIALS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
With 6 figs., 37 refs.. SICI: 0232-1300(200805)43:5<542::AID-CRAT200711041>3.0.TX;2-R