Published December 2012 | Version v1
Journal article

Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

  • 1. LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria)
  • 2. Universite Mouloud Mammeri de Tizi Ouzou (Algeria)
  • 3. M'hamed Bougara University, Boumerdes (Algeria)
  • 4. EMP, Bordj ElBahri, Algiers (Algeria)

Description

The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/crat.201200309

Additional details

Identifiers

Publishing Information

Journal Title
Crystal Research and Technology (Online)
Journal Volume
47
Journal Issue
12
Journal Page Range
p. 1269-1278
ISSN
1521-4079

Optional Information

Notes
With 6 figs., 1 tab., 21 refs.