Published 1980 | Version v1
Report Open

Influence of the primary recoil spectrum on radiation-induced segregation in nickel-silicon

Creators

Description

Radiation induced segregation in Ni-12.7% Si has been examined for 1.5 MeV He, 2.0 MeV Li, and 2.75 MeV Kr irradiations. A method to simultaneously damage and analyze the specimens during light-ion irradiation is described. The amount of segregation was determined by using Rutherford backscattering spectrometry to measure the thickness of the γ' layer which develops at the surface. Substantially less segregation of Si to the surface is observed for the Kr irradiation than for the light-ion irradiations at 5200C

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.

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Additional details

Publishing Information

Imprint Pagination
17 p.
Report number
CONF-801072--7

Conference

Title
Symposium on irradiation phase stability.
Dates
5 - 11 Oct 1980.
Place
Pittsburgh, PA, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
12626665
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
COLLISIONS; EXPERIMENTAL DATA; HELIUM IONS; LITHIUM IONS; MEV RANGE 01-10; NICKEL ALLOYS; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; SEGREGATION; SILICON ALLOYS; TEMPERATURE DEPENDENCE
Descriptors DEC
ALLOYS; ATOMIC IONS; CHARGED PARTICLES; DATA; ELASTIC SCATTERING; ENERGY RANGE; INFORMATION; IONS; MEV RANGE; NUMERICAL DATA; RADIATION EFFECTS; SCATTERING; TRANSITION ELEMENT ALLOYS