Diffusion of group III-, IV- and V-elements in Si under ion irradiation

The radiation-enhanced redistribution of different substitutional elements in silicon preinserted by ion implantation has been investigated under Ne irradiation at temperatures up to 850degC using secondary ion mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy (XTEM), respectively. A systematical behaviour of the enhanced diffusivity with the corresponding thermal diffusivities was found for all elements investigated only within a small temperature window around 750degC. The effects could be explained by radiation-enhanced diffusion perturbed by dynamical sinks remaining due to the quenching of the collision cascades and acting as decoration centres for the impurities. (orig.)