Published December 21, 2006
| Version v1
Journal article
Effect of annealing on optical properties and band alignments of ZrO2/Si(1 0 0) by nitrogen-assisted reactive sputtering
Creators
- 1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Science, PO Box 1129, Hefei 230031 (China)
- 2. Electronic and Electrical Engineering and London Centre for Nanotechnology, University College London, Torrington Place, London WCIE 7JE, UK (United Kingdom)
Description
ZrO2 films were prepared by nitrogen-assisted radio frequency (RF) reactive sputtering on n-type silicon (100). Optical properties and band alignments of ZrO2 films on Si have been investigated by using x-ray photoelectron spectroscopy (XPS) and spectroscopy ellipsometry (SE). The improved film quality was obtained after annealing in N2/O2 ambient with stable interfacial properties. Optical properties were analysed based on the SE fitting results. According to the valence-band spectrum results, the zero-field energy-band alignments for ZrO2/SiO2/Si stacks were also extracted. Our results indicate that the nitrogen-assisted process shows its outstanding ability in the control of interfaces and has potential application in microelectronics
Additional details
Identifiers
- DOI
- 10.1088/0022-3727/39/24/027;
- PII
- S0022-3727(06)31813-X;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 39
- Journal Issue
- 24
- Journal Page Range
- p. 5285-5289
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38081035
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; ELLIPSOMETRY; FILMS; MICROELECTRONICS; NITROGEN; OPTICAL PROPERTIES; RADIOWAVE RADIATION; SILICON; SILICON OXIDES; SPUTTERING; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; HEAT TREATMENTS; MEASURING METHODS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS