Published June 16, 1986
| Version v1
Journal article
On γ-radiation and electron beam dose and gate oxide thickness dependence of radiation defects in MOS capacitors
- 1. Politechnika Warszawska (Poland)
Description
The changes of MOS capacitor parameters caused by γ- or electron irradiation are determined by measuring 1 MHz capacitance-voltage characteristics. The flatband voltage and interface trap density of Al-SiO2-Si and (Hg)-SiO2-Si structures are calculated as functions of radiation doses and oxide thickness. The results point out that radiation effects in the oxide volume (hole generation and transport) only to a limited extent determine changes of MOS structure parameters
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 95
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K203-K206
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17089982
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRON BEAMS; GAMMA RADIATION; HOLES; INTERFACES; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SILICON OXIDES; THICKNESS; TRAPS
- Descriptors DEC
- BEAMS; CHALCOGENIDES; DIMENSIONS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY STORAGE SYSTEMS; EQUIPMENT; IONIZING RADIATIONS; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- Short note.