Published March 1982
| Version v1
Journal article
Large homogeneous Pbsub(1-x)Snsub(x)Te single crystal growth by vapor-melt-solid mechanism
Description
Single crystals of Pbsub(1-x)Snsub(x)Te measuring up to 25 mm in diameter and 100 mm in length were grown by the vapor-melt-solid (VMS) mechanism. The VMS-grown crystals showed excellent uniformity in composition. The Sn mole fraction along the growth axis was 0.19 +- 0.01 in the region of 0.2 < g < 0.8, where g is the solidified fraction, when the crystals were grown from a Pbsub(0.8)Snsub(0.2)Te charge. All as-grown crystals showed p-type conduction and had almost a 1.7 x 1019 cm-3 carrier concentration and 1300 cm2/V x s Hall mobility at 77 K. (orig.)
Additional details
Publishing Information
- Journal Title
- J. Cryst. Growth
- Journal Volume
- 57
- Journal Issue
- 1
- Series
- J. Cryst. Growth.
- Journal Page Range
- 141-144
- ISSN
- 0022-0248
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 13681425
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CARRIER DENSITY; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; EXPERIMENTAL DATA; HALL EFFECT; KINETICS; LEAD TELLURIDES; SOLIDIFICATION; TIN TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; DATA; INFORMATION; LEAD COMPOUNDS; MOBILITY; NUMERICAL DATA; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS