Published December 2019
| Version v1
Journal article
Mössbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer
Creators
- 1. Shizuoka Institute of Science and Technology (Japan)
- 2. Nagoya University Furo-cho, Graduate School of Engineering and School of Engineering (Japan)
Description
Fe diffusion and segregation process is studied in mc-Si crystals by "Mössbauer spectroscopic microscope (MSM)", which enables us to measure the Fe diffusion profiles separately for different Fe chemical states in mc-Si with a spatial resolution of several micrometres. This new method opens a possibility to investigate a diffusion process strongly influenced by the interactions and the correlations between Fe impurities and lattice defects such as dislocations, grain boundaries, and residual stresses in different grains of materials.
Additional details
Identifiers
Publishing Information
- Journal Title
- Hyperfine Interactions
- Journal Volume
- 240
- Journal Issue
- 1
- Journal Page Range
- p. 1-8
- ISSN
- 0304-3843
- CODEN
- HYINDN
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51081159
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL STATE; CORRELATIONS; CRYSTALS; DIFFUSION; DISLOCATIONS; GRAIN BOUNDARIES; IMPURITIES; INTERACTIONS; IRON ADDITIONS; MOESSBAUER EFFECT; RESIDUAL STRESSES; SEGREGATION; SILICON; SOLAR CELLS; SPATIAL RESOLUTION
- Descriptors DEC
- ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; IRON ALLOYS; LINE DEFECTS; MICROSTRUCTURE; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RESOLUTION; SEMIMETALS; SOLAR EQUIPMENT; STRESSES; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2019 Springer Nature Switzerland AG