Published October 1973
| Version v1
Journal article
Piezoresistance dependence on impurity concentration in p-InSb at 4.20K
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Зависимость пьезосопротивления от концентрации примеси в n-InSb при 4,2 K
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 7
- Journal Issue
- 10
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2019-2020
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5118390
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANTIMONY COMPOUNDS; COMPRESSION; EFFECTIVE MASS; ELECTRIC CONDUCTIVITY; HOLES; IMPURITIES; INDIUM COMPOUNDS; P-TYPE CONDUCTORS; PIEZOELECTRICITY; QUANTITY RATIO; STRAINS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTRICITY; MASS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.