Published 1984
| Version v1
Miscellaneous
Effect of isochronous annealing on the photoluminescence of Ar+ implanted zinc selenide monocrystals
Description
It is shown that photoluminescence (PL) of zinc selenide in ''green'' spectrum region is determined by the presence of zinc vacancies caused by Ar+ ion implantation. The PL ''green'' maximum shift into longwave region at heat treatment temperature >= 400 deg C is found. It is established that a strong annealing of radiation defects in zinc selenide occurs at temperatures >= 650 deg C
Additional details
Additional titles
- Original title (Russian)
- Влияние изохронных отжигов на фотолюминесценцию монокристаллов селенида цинка, имплантированных Ар
Publishing Information
- Imprint Title
- Experimental and theoretical physics. V. 2
- Journal Issue
- no.2
- Series
- Kratkie Soobshcheniya po Fizike.
- Journal Page Range
- p. 55-59.
- Report number
- INIS-SU--363
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 17060648
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARGON IONS; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 100-1000; MONOCRYSTALS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; VACANCIES; VISIBLE SPECTRA; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; EMISSION; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LUMINESCENCE; PHOTON EMISSION; POINT DEFECTS; SELENIDES; SELENIUM COMPOUNDS; SPECTRA; ZINC COMPOUNDS
Optional Information
- Notes
- 7 refs.; 2 figs. Imprint:Ehksperimental'naya i teoreticheskaya fizika. Sbornik 2.