Pd adsorption on Si(1 1 3) surface: STM and XPS study
- 1. Nano High-Tech Research Center, Toyota Technological Institute, 2-12-1, Hisakata Tempaku, Nagoya 468-8511 (Japan)
Description
Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd2Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd2Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.02.035Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.02.035;
- PII
- S0169-4332(08)00302-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 254
- Journal Issue
- 23
- Journal Page Range
- p. 7797-7802
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 9. international conference on atomically controlled surfaces, interfaces and nanostructures
- Acronym
- ASCIN-9
- Dates
- 11-15 Nov 2007
- Place
- Tokyo (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40032182
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; AGGLOMERATION; ANNEALING; CRYSTALLIZATION; LAYERS; PALLADIUM SILICIDES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACES; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ELECTRON SPECTROSCOPY; ELEMENTS; HEAT TREATMENTS; MICROSCOPY; PALLADIUM COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SORPTION; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.