Published May 26, 1993
| Version v1
Journal article
Anodic and thermal films of yttrium stabilized zirconium dioxide for buffer layers on silicon
Creators
- 1. Minskij Radiotekhnicheskij Inst., Minsk (Belarus)
Description
Structural and buffer properties of yttrium stabilized zirconium dioxide films (YSZ) were investigated. The films were obtained by electrochemical oxidation of thin (100 nm) zirconium films with 10% content of yttrium, uniformly distributed in volume. It is concluded that YSX films, obtained by the method of electrochemical anodizing, may be used as buffer layers of HTSC structures. 5 refs
Additional details
Additional titles
- Original title (Russian)
- Анодные и термические пленки диоксида циркония, стабилизированного иттрием, для буферных слоев на кремнии
Publishing Information
- Journal Title
- Pis'ma v Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 19
- Journal Issue
- 10
- Journal Page Range
- p. 44-47.
- ISSN
- 0320-0116
- CODEN
- PZTFDD
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25027697
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANODIZATION; CUBIC LATTICES; FILMS; PHASE STUDIES; SILICON; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; TEXTURE; THICKNESS; VAPOR PLATING; YTTRIUM ADDITIONS; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; CORROSION PROTECTION; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEPOSITION; DIMENSIONS; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELEMENTS; OXIDES; OXYGEN COMPOUNDS; PLATING; SEMIMETALS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS