Published May 26, 1993 | Version v1
Journal article

Anodic and thermal films of yttrium stabilized zirconium dioxide for buffer layers on silicon

  • 1. Minskij Radiotekhnicheskij Inst., Minsk (Belarus)

Description

Structural and buffer properties of yttrium stabilized zirconium dioxide films (YSZ) were investigated. The films were obtained by electrochemical oxidation of thin (100 nm) zirconium films with 10% content of yttrium, uniformly distributed in volume. It is concluded that YSX films, obtained by the method of electrochemical anodizing, may be used as buffer layers of HTSC structures. 5 refs

Additional details

Additional titles

Original title (Russian)
Анодные и термические пленки диоксида циркония, стабилизированного иттрием, для буферных слоев на кремнии

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
19
Journal Issue
10
Journal Page Range
p. 44-47.
ISSN
0320-0116
CODEN
PZTFDD