Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers
Description
In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m2, driving voltage was 4.4 V, and current density was 2.4 mA/cm2. A white OLED component was then manufactured by doping red dopant [Os(bpftz)2(PPh2Me)2] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L'Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIEx,y of (0.31,0.35) at a luminance of 1000 cd/m2, with a maximum luminance of 15,600 cd/m2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2014.03.040Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2014.03.040;
- PII
- S0022-2313(14)00187-2;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 153
- Journal Page Range
- p. 312-316
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47003723
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CURRENT DENSITY; DOPED MATERIALS; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRONS; EXCITONS; FILMS; LIGHT EMITTING DIODES
- Descriptors DEC
- ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; QUASI PARTICLES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.