Photoluminescence properties of ZnS:Mn single crystal effected by defect drift in electric and pulsed magnetic fields

Luminescence properties of ZnS:Mn single crystal are studied before and after drift of defects in electric field additionally influenced by pulsed magnetic field. It is detected that besides the change of luminescence center quantity the efficiency of channels of radiative and non-radiative recombination at the anode and cathode areas changes also due to the change of the Fermi energy position in these areas of the crystal. Simultaneous presence of two types of manganese ions in ZnS:Mn crystal possessing different local symmetry is found. These ions are sensitizers for different by nature emitting centers for self-activation (SA) and Mn-related photoluminescence. Selectivity in transfer of excitation to a particular emission center (SA or Mn) is defined by the efficiency of resonance excitation transfer.